1gate 2 source 3drain KI1304BDL features trenchfet power mosfet 100% rg tested absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current (t j = 150 )t c =25 -- t c =70 i d 0.90 0.71 a continuous drain current (t j = 150 )t a =25 -- t a =70 i d 0.85*1,2 0.68*1,2 a pulsed drain current i dm a continuous source drain diode current tc=25 0.31 ta=25 0.28 power dissipation t c =25 -- t c =70 p d 0.37 0.24 w power dissipation t a =25 -- t a =70 p d 0.34*1,2 0.22*1,2 w operating junction and storage temperature range t j ,t stg -55to+150 *1 surface mounted on 1" x 1" fr4 board. *2 t = 5 sec i s a thermal resistance ratings ta = 25 parameter symbol typical maximum unit maximum junction-to-ambient*1,2 t 5sec r thja 315 375 maximum junction-to-foot (drain) steady state r thjf 285 340 *1 surface mounted on 1" x 1" fr4 board. *2 maximum under steady state conditions is 360 /w. /w smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type mosfet smd type smd type smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v ds v gs =0v,i d =250 a 30 v vds temperature coefficient v ds /t j 27.3 vgs(th) temperature coefficient v gs(th) /t j 3 gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.6 1.3 v gate-body leakage i gss v ds =0v,v gs = 12 v 100 na v ds =30 v, v gs =0v 1 v ds =30 v, v gs =0v,t j =70 5 on-state drain current i d(on) v ds 5v,v gs =4.5v 4a v gs =4.5v,i d =0.9 0.216 0.270 v gs =2.5v,i d =0.75 0.308 0.385 forward transconductance g fs v ds =15 v, i d =0.9 2 s input capacitance c iss 100 output capacitance c oss 30 reverse transfer capacitance c rss 20 total gate charge * q g v ds =15v ,v gs =4.5v,i d =0.9 1.8 2.7 total gate charge * q g 1.1 1.7 gate-source charge * q gs 0.4 gate-drain charge * q gd 0.6 gate resistance r g f=1mhz 1.5 2.3 t d(on) 10 15 t r 30 45 t d(off) 525 t f 10 15 continuous source-drain diode current i s tc = 25 0.31 pulse diode forward current* i sm 4 body diode voltage v sd i s = 0.28 a 0.8 1.2 v body diode reverse recovery time t rr 50 75 ns body diode reverse recovery charge q rr 105 160 nc reverse recovery fall time t a 34 ns reverse recovery rise time t b 16 ns * pulse test: pw 300 s duty cycle 2%. zero gate voltage drain current i dss drain-source on-state resistance r ds(on) v dd =15v,r l =22 , i d =0.68a , v gen =4.5v , r g =1 nc turn-off time turn-on time i f =0.28a,d i /d t =100a/ s,t j =25 a pf mv/ v ds =15v ,v gs =2.5 v , i d =0.9 i d =250 a v ds =15v,v gs =0v,f=1mhz ns a marking marking kf KI1304BDL smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type mosfet smd type smd type smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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